Title :
Low-k dielectric reliability: impact of test structure choice, copper and integrated dielectric quality
Author :
Tokei, Zs ; Li, Y.-L. ; Ciofi, I. ; Croes, K. ; Beyer, G.P.
Author_Institution :
IMEC, Kapeldreef 75, B-3001 Leuven (Belgium), Phone: +32-16-28.17.78, Fax: +32-16-28.17.06, E-mail: Zsolt.Tokei@imec.be
Abstract :
As dielectric spacing between adjacent copper wires scales below 50nm, back-end-of-line dielectric reliability is becoming an increasingly important challenge both for advanced logic and memory devices. It is crucial to understand which physical mechanisms are relevant, because this has an impact on modeling and prediction. In this contribution test methods, test structures and physical mechanisms are discussed.
Keywords :
Capacitors; Copper; Dielectric devices; Dielectric materials; Moisture; Packaging; Paramagnetic resonance; Testing; Vehicles; Wafer scale integration;
Conference_Titel :
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
978-1-4244-1911-1
Electronic_ISBN :
978-1-4244-1912-8
DOI :
10.1109/IITC.2008.4546940
