Temperature independent log domain filter

Author

Thanapitak, Surachoke ; Kirawanich, Phumin ; Wilairat, Decha ; Sedtheethorn, Pongsathorn

Author_Institution

Dept. of Electr. Eng., Mahidol Univ., Nakhon Pathom, Thailand

fYear

2013

fDate

4-6 Sept. 2013

Firstpage

357

Lastpage

360

Abstract

This paper presents the current mode log domain filter based on the Bernoulli cell which has moderately low sensitivity to temperature change. According to the simulation results in a standard 0.18μm CMOS process, the sensitivity of the output current over temperature of this log domain circuit is 2.941pA/°C. This is archived by using the modified current reference circuit which is directly proportion to temperature as the bias current for the log domain filter circuit. Additionally, this modified current reference circuit can be operated at low power supply voltage (1.11V) while high PSSR (0.43nA/V) is maintained. The power consumption of this modified current reference is in the sub-microwatt range (0.1μW).

Keywords

CMOS integrated circuits; active filters; low-power electronics; reference circuits; Bernoulli cell; bias current; current mode log domain filter; current reference circuit; power 0.1 muW; size 0.18 mum; temperature independent log domain filter; voltage 1.11 V; MOSFET; Passband; Sensitivity; Simulation; Temperature dependence; Temperature sensors; Current reference circuits; Log domain filters; Temperature independence;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications and Information Technologies (ISCIT), 2013 13th International Symposium on

Conference_Location

Surat Thani

Print_ISBN

978-1-4673-5578-0

Type

conf

DOI

10.1109/ISCIT.2013.6645860

Filename

6645860