DocumentCode :
1904896
Title :
Temperature independent log domain filter
Author :
Thanapitak, Surachoke ; Kirawanich, Phumin ; Wilairat, Decha ; Sedtheethorn, Pongsathorn
Author_Institution :
Dept. of Electr. Eng., Mahidol Univ., Nakhon Pathom, Thailand
fYear :
2013
fDate :
4-6 Sept. 2013
Firstpage :
357
Lastpage :
360
Abstract :
This paper presents the current mode log domain filter based on the Bernoulli cell which has moderately low sensitivity to temperature change. According to the simulation results in a standard 0.18μm CMOS process, the sensitivity of the output current over temperature of this log domain circuit is 2.941pA/°C. This is archived by using the modified current reference circuit which is directly proportion to temperature as the bias current for the log domain filter circuit. Additionally, this modified current reference circuit can be operated at low power supply voltage (1.11V) while high PSSR (0.43nA/V) is maintained. The power consumption of this modified current reference is in the sub-microwatt range (0.1μW).
Keywords :
CMOS integrated circuits; active filters; low-power electronics; reference circuits; Bernoulli cell; bias current; current mode log domain filter; current reference circuit; power 0.1 muW; size 0.18 mum; temperature independent log domain filter; voltage 1.11 V; MOSFET; Passband; Sensitivity; Simulation; Temperature dependence; Temperature sensors; Current reference circuits; Log domain filters; Temperature independence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Information Technologies (ISCIT), 2013 13th International Symposium on
Conference_Location :
Surat Thani
Print_ISBN :
978-1-4673-5578-0
Type :
conf
DOI :
10.1109/ISCIT.2013.6645860
Filename :
6645860
Link To Document :
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