Further Enhancement of Electro-migration Resistance by Combination of Self-aligned Barrier and Copper Wiring Encapsulation Techniques for 32-nm Nodes and Beyond

Author

Kudo, H. ; Haneda, M. ; Tabira, T. ; Sunayama, M. ; Ohtsuka, N. ; Shimizu, N. ; Ochimizu, H. ; Tsukune, A. ; Suzuki, T. ; Kitada, H. ; Amari, S. ; Matsuyama, H. ; Owada, T. ; Watatani, H. ; Futatsugi, T. ; Nakamura, T. ; Sugii, T.

Author_Institution

Fujitsu Laboratories Limited, Phone: +81-42-532-1249, FAX: +81-42-532-2513, E-mail: kudo.hiroshi@jp.fujitsu.com

fYear

2008

fDate

1-4 June 2008

Firstpage

117

Lastpage

119

Abstract

To further enhance electro-migration resistance, we applied a self-aligned barrier technique to Cu wiring encapsulated with a MnO barrier. This combination of the self-aligned barrier and encapsulation techniques increased maximum current density to 9 times that of the conventional one. The Cu wiring fabricated by the combination of the two techniques also had greater resistance to stress-induced voiding set off by thermal stress. The combination of the two techniques also enhanced the lifetime of time-dependent dielectric breakdown by a factor of 160.

Keywords

Copper; Current density; Electronic mail; Encapsulation; Laboratories; Thermal resistance; Thermal stresses; Thickness control; Transistors; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2008. IITC 2008. International

Conference_Location

Burlingame, CA, USA

Print_ISBN

978-1-4244-1911-1

Electronic_ISBN

978-1-4244-1912-8

Type

conf

DOI

10.1109/IITC.2008.4546942

Filename

4546942