DocumentCode
1904968
Title
CMOS Compatible Micromachining by Dry Silicon-Etching Techniques
Author
Adams, S. ; Hilleringmann, Ulrich ; Goser, K.
Author_Institution
University of Dortmund, Faculty of Electrical Engineering, Emil-Figge-Str. 68, D-4600 Dortmund 50, Fax: (0)231/7554450
fYear
1992
fDate
14-17 Sept. 1992
Firstpage
191
Lastpage
194
Abstract
Dry etching techniques are used for monolithic integration of a mirco system consisting of a pressure sensor, integrated optics and VLSI CMOS circuits. The sensor is etched from the front side of the wafer and with the support of TEOS-spikes the membrane is deposited by PECVD technique.
Keywords
Anisotropic magnetoresistance; Biomembranes; CMOS process; Circuits; Etching; Micromachining; Optical sensors; Plasma applications; Plasma devices; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location
Leuven, Belgium
Print_ISBN
0444894780
Type
conf
Filename
5435186
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