LC-oscillators above 100 GHz in silicon-based technology

Author

Winkler, Wolfgang ; Borngräber, Johannes ; Heinemann, Bernd

Author_Institution

IHP, Frankfurt, Germany

fYear

2004

fDate

21-23 Sept. 2004

Firstpage

131

Lastpage

134

Abstract

In this paper, voltage-controlled LC-oscillators (VCO) are presented, reaching oscillation frequencies well above 100 GHz. The oscillators were fabricated in a 200 GHz SiGe:C BiCMOS technology with 0.25 μm minimum feature size. In the design of the VCOs, two approaches for the frequency tuning of the oscillators were investigated. In the first design, the current flowing through the oscillator core was varied to get control of the output frequency. In the second design, a MOS-type varicap was used to tune the frequency of the LC-oscillator. The fabricated oscillators have a tuning range from 105.8 GHz to 114.5 GHz and from 113.2 GHz to 117.2 GHz, respectively.

Keywords

BiCMOS analogue integrated circuits; MIMIC; circuit tuning; millimetre wave oscillators; varactors; voltage-controlled oscillators; 0.25 micron; 105.8 to 114.5 GHz; 113.2 to 117.2 GHz; 200 GHz; BiCMOS; MOS-type varicap; SiGe:C; VCO; current controlled frequency; frequency tuning; tuning range; voltage-controlled LC-oscillators; Automotive engineering; BiCMOS integrated circuits; Frequency; Inductors; MIM capacitors; Power amplifiers; Radar applications; Silicon; Tuning; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2004. ESSCIRC 2004. Proceeding of the 30th European

Print_ISBN

0-7803-8480-6

Type

conf

DOI

10.1109/ESSCIR.2004.1356635

Filename

1356635