DocumentCode :
1905019
Title :
LC-oscillators above 100 GHz in silicon-based technology
Author :
Winkler, Wolfgang ; Borngräber, Johannes ; Heinemann, Bernd
Author_Institution :
IHP, Frankfurt, Germany
fYear :
2004
fDate :
21-23 Sept. 2004
Firstpage :
131
Lastpage :
134
Abstract :
In this paper, voltage-controlled LC-oscillators (VCO) are presented, reaching oscillation frequencies well above 100 GHz. The oscillators were fabricated in a 200 GHz SiGe:C BiCMOS technology with 0.25 μm minimum feature size. In the design of the VCOs, two approaches for the frequency tuning of the oscillators were investigated. In the first design, the current flowing through the oscillator core was varied to get control of the output frequency. In the second design, a MOS-type varicap was used to tune the frequency of the LC-oscillator. The fabricated oscillators have a tuning range from 105.8 GHz to 114.5 GHz and from 113.2 GHz to 117.2 GHz, respectively.
Keywords :
BiCMOS analogue integrated circuits; MIMIC; circuit tuning; millimetre wave oscillators; varactors; voltage-controlled oscillators; 0.25 micron; 105.8 to 114.5 GHz; 113.2 to 117.2 GHz; 200 GHz; BiCMOS; MOS-type varicap; SiGe:C; VCO; current controlled frequency; frequency tuning; tuning range; voltage-controlled LC-oscillators; Automotive engineering; BiCMOS integrated circuits; Frequency; Inductors; MIM capacitors; Power amplifiers; Radar applications; Silicon; Tuning; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2004. ESSCIRC 2004. Proceeding of the 30th European
Print_ISBN :
0-7803-8480-6
Type :
conf
DOI :
10.1109/ESSCIR.2004.1356635
Filename :
1356635
Link To Document :
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