Title :
A wideband CMOS VCO for zero-IF GSM-CDMA single-chip transceiver
Author :
Manetakis, Kostas ; Jessie, Darryl ; Narathong, Chiewcham
Author_Institution :
Qualcomm CDMA Technol., San Diego, CA, USA
Abstract :
This paper presents a low-power CMOS VCO in a 0.35 μm process which achieves a tuning range of 2.47 GHz-3.47 GHz and phase noise performance of -145dBc/Hz at 3 MHz offset (from a 1.8 GHz carrier). 5-bit digital coarse-tuning and accumulation-type MOS varactors allow for a 33% tuning range, which is required to cover the LO frequency range of a zero-IF GSM-CDMA transceiver and to account for process and temperature variations. Optimum design techniques ensure low VCO gain (<104 MHz/V) for good interoperability with the frequency synthesizer. An integrated regulator provides low supply pushing (40 kHz/V) and reduces the AM-to-PM sensitivity from the supply.
Keywords :
CMOS integrated circuits; MMIC oscillators; cellular radio; circuit tuning; code division multiple access; low-power electronics; phase noise; transceivers; varactors; voltage regulators; voltage-controlled oscillators; 0.35 micron; 1.8 GHz; 2.47 to 3.47 GHz; 5 bit; CMOS VCO; GSM-CDMA transceiver; VCO gain; accumulation-type MOS varactors; digital coarse-tuning; frequency synthesizer interoperability; integrated regulator; low supply pushing; low-power VCO; phase noise; single-chip transceiver; supply AM-to-PM sensitivity; transceiver LO frequency range; tuning range; wideband VCO; zero-IF transceiver; CMOS process; Frequency; Phase noise; Temperature distribution; Temperature sensors; Transceivers; Tuning; Varactors; Voltage-controlled oscillators; Wideband;
Conference_Titel :
Solid-State Circuits Conference, 2004. ESSCIRC 2004. Proceeding of the 30th European
Print_ISBN :
0-7803-8480-6
DOI :
10.1109/ESSCIR.2004.1356637
