Title :
A 14-V high speed driver in 5-V-only 0.35-μm standard CMOS
Author :
Killat, Dirk ; Salzmann, Oliver ; Baumgärtner, Andreas
Author_Institution :
Dialog Semicond. GmbH, Kirchheim-Teck, Germany
Abstract :
A high-voltage and high-speed driver, using only 5-V and 3.3-V technology features in 0.35-μm standard CMOS, is presented. The pull-up function is performed by cascaded 5-V PMOS; a 5-V CMOS compatible gate-shifted LDD NMOS performs the pull-down. The maximum continuous operating voltage is 14 V. The driver is suitable for inductive and capacitive loads. An external MOSFET with 1 nF gate capacitance is fully switched in 200 ns, the peak current that the driver delivers is more than 100 mA. The area of the driver including pad is 0.18 mm2. The paper discusses characteristics and lifetime of the driver transistors, design trade-offs, and presents simulations, measurement results and statistical data.
Keywords :
CMOS integrated circuits; driver circuits; power MOSFET; power integrated circuits; 0.35 micron; 1 nF; 100 mA; 14 V; 200 ns; 5 V; CMOS; MOSFET switching speed; capacitive loads; cascaded PMOS; driver peak current; driver transistor lifetime; external MOSFET gate capacitance; gate-shifted LDD NMOS; high speed driver; high-voltage driver; high-voltage level shifters; inductive loads; pull-down function; pull-up function; CMOS technology; Digital control; Diodes; Driver circuits; Electronic ballasts; Fluorescent lamps; Logic; MOS devices; MOSFETs; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2004. ESSCIRC 2004. Proceeding of the 30th European
Print_ISBN :
0-7803-8480-6
DOI :
10.1109/ESSCIR.2004.1356640