Title :
An evaluation of electrografted copper seed layers for enhanced metallization of deep TSV structures
Author :
Ledain, S. ; Bunel, C. ; Mangiagalli, P. ; Carles, A. ; Frederich, N. ; Delbos, E. ; Omnes, L. ; Etcheberry, A.
Author_Institution :
NXP Semiconductors, 2, Esplanade Anton Philips ¿ Campus Effiscience 14460 Colombelles, phone: (+33) 2 31 45 30 38, fax: +33 (0)2 31 45 21 12, sophie.ledain@nxp.com
Abstract :
In this paper, we present an evaluation of electrografted seed layers as an alternative metallization route to usual PVD liners for deep Through Silicon Vias (TSV). The capability of the electrografted layers to provide a better step coverage is demonstrated in high aspect ratio structures. The positive impact of the seed layer quality on the subsequent filling steps by conventional copper electrodeposition is also presented.
Keywords :
Additives; Atherosclerosis; Chemicals; Copper; Etching; Filling; Metallization; Silicon; Stacking; Through-silicon vias;
Conference_Titel :
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
978-1-4244-1911-1
Electronic_ISBN :
978-1-4244-1912-8
DOI :
10.1109/IITC.2008.4546955
