Title :
TDDB Kinetics and their Relationship with the E- and √E-models
Author :
Yiang, Kok-Yong ; Yao, H. Walter ; Marathe, Amit
Author_Institution :
Technology and Reliability Department, Advanced Micro Devices, Inc., 1 AMD Place, MS143, Sunnyvale, CA 94088, 1408-749-5821; fax: 408-749-5585; e-mail: kok-yong.yiang@amd.com
Abstract :
Time-dependent dielectric breakdown (TDDB) studies on advanced Cu/low-k interconnects show that activation energy and voltage acceleration are dependent on stress voltage and temperature respectively. These dependencies can be explained by the E- and √E-models and have important implications on the appropriate test regime for accurate lifetime projections.
Keywords :
Acceleration; Breakdown voltage; Dielectric breakdown; Differential equations; Electron traps; Kinetic theory; Life testing; Stress; Temperature dependence; Temperature distribution; √E-model; BEOL; E-model; Time-dependent Dielectric Breakdown (TDDB);
Conference_Titel :
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
978-1-4244-1911-1
Electronic_ISBN :
978-1-4244-1912-8
DOI :
10.1109/IITC.2008.4546957
