Title :
Efficiency of body biasing in 90 nm CMOS for low power digital circuits
Author :
Von Arnim, Klaus ; Borinski, Eduardo ; Seegebrecht, Peter ; Fiedler, Horst ; Brederlow, Ralf ; Thewes, Roland ; Berthold, Jörg ; Pacha, Christian
Author_Institution :
Corporate Res., Infineon Technol., Munich, Germany
Abstract :
This paper presents an evaluation of body biasing, based on measured static and dynamic device performance. The efficiency of body biasing in sub-130 nm CMOS circuits strongly depends on the device type and operating temperature. While forward biasing still provides a significant performance gain in a 90 nm CMOS triple well process, the efficiency of reverse biasing nearly vanishes. The impact of the zero temperature coefficient point on low voltage digital circuit design is investigated.
Keywords :
CMOS digital integrated circuits; integrated circuit design; leakage currents; logic design; low-power electronics; 90 nm; CMOS triple well process; forward body biasing; leakage reduction; low power digital circuits; operating temperature; reverse body biasing; zero temperature coefficient point; CMOS digital integrated circuits; CMOS logic circuits; CMOS technology; Digital circuits; Gate leakage; Leakage current; Logic devices; Subthreshold current; Temperature dependence; Threshold voltage;
Conference_Titel :
Solid-State Circuits Conference, 2004. ESSCIRC 2004. Proceeding of the 30th European
Print_ISBN :
0-7803-8480-6
DOI :
10.1109/ESSCIR.2004.1356646
