DocumentCode
1905311
Title
Optimization of CMP defect detection schemes [VLSI manufacture]
Author
Swecker, Aaron L. ; Strojwas, Andrzej J. ; Xiaolei ; Levy, Ady ; Bell, Bobby
Author_Institution
Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
fYear
1997
fDate
6-8 Oct 1997
Abstract
In this paper, the use of Fourier filtering in dark field defect detection is investigated for the post chemical mechanical polishing (CMP) inspection application using a simulation tool, METRO. Advanced detection techniques have been studied to determine methods of increasing capture rates in densely patterned arrays. Two critical CMP process defects, microscratches and particles, are evaluated. The results illustrate that Fourier filtering will improve the defect signal relative to the background signal. Additionally, color variation, underlying grain and pattern noise will be minimized using Fourier filtering
Keywords
VLSI; digital simulation; electronic engineering computing; inspection; integrated circuit yield; polishing; surface contamination; surface topography; CMP defect detection schemes; Fourier filtering; METRO simulation tool; VLSI manufacture; background signal; capture rate improvement; chemical mechanical polishing; critical CMP process defects; dark field defect detection; defect signal; densely patterned arrays; microscratches; particles; pattern noise minimization; post CMP inspection; Chemicals; Electromagnetic scattering; Electromagnetic waveguides; Filtering; Lenses; Light sources; Maxwell equations; Semiconductor device modeling; Surfaces; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing Conference Proceedings, 1997 IEEE International Symposium on
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-3752-2
Type
conf
DOI
10.1109/ISSM.1997.664588
Filename
664588
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