Title :
The Permeable Junction Base Transistor with a new Gate of extremely high doped p++ - GaAs
Author :
Gräber, J. ; Kamp, M. ; Mörsch, G. ; Meyer, Roland ; Hardtdegen, H. ; Lüth, H.
Author_Institution :
Institut fÿr Schicht- und Ionentechnik (ISI), Forschungszentrum Jÿlich GmbH, Postfach 1913, D-5170 Jÿlich, FRG
Abstract :
The Permeable Junction Base Transistor (PJBT) is a new concept of vertical field effect transistor (v-FET) that has the potential of very high frequency operation. The gate of the new homoepitaxial device consists of heavily p-type doped GaAs and is embedded in nominally undoped layers to reduce the gate capacitance. Design and technology are described and preliminary results are presented.
Keywords :
Capacitance; Contact resistance; Doping; FETs; Frequency; Gallium arsenide; Gratings; Schottky gate field effect transistors; Surface resistance; Tungsten;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
