Title :
An HBT preamplifier for 40-Gb/s optical transmission systems
Author :
Suzuki, Y. ; Shimawaki, H. ; Amamiya, Y. ; Fukuchi, K. ; Nagano, N. ; Yano, H. ; Honjo, K.
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
Abstract :
A preamplifier for 40-Gb/s optical transmission systems has been constructed using AlGaAs-InGaAs HBTs with p/sup +/ regrown extrinsic base layers. This preamplifier achieved a bandwidth of 34.6 GHz and a transimpedance gain of 41.6 dB/spl Omega/. This is the widest bandwidth in a preamplifier ever reported. These characteristics are suitable for use in a 40 Gb/s optical receiver. The results indicate that AlGaAs-InGaAs HBTs with p/sup +/ regrown extrinsic base layers are very promising for the implementation of 40 Gb/s optical transmission systems.
Keywords :
III-V semiconductors; aluminium compounds; bipolar MIMIC; bipolar analogue integrated circuits; digital communication; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave amplifiers; optical receivers; preamplifiers; wideband amplifiers; 34.6 GHz; 40 Gbit/s; AlGaAs-InGaAs; AlGaAs-InGaAs HBT; HBT preamplifier; optical receiver; optical transmission systems; p/sup +/ regrown extrinsic base layers; Bandwidth; Circuits; Gallium arsenide; Heterojunction bipolar transistors; High speed optical techniques; Molecular beam epitaxial growth; Optical receivers; Preamplifiers; Time division multiplexing; Wavelength division multiplexing;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-3504-X
DOI :
10.1109/GAAS.1996.567869
