Title :
Cost-effective air-gap interconnects by all-in-one post-removing process
Author :
Nakamura, N. ; Matsunaga, N. ; Kaminatsui, T. ; Watanabe, K. ; Shibata, H.
Author_Institution :
Advanced BEOL Technology Department, Center for Semiconductor Research & Development, Semiconductor Company, Toshiba Corporation, Tel: +81-45-770-5646 Fax: +81-45-770-4104, E-mail:n-nakamura@amc.toshiba.co.jp
Abstract :
Low process cost air-gap structure for multilevel interconnect system is proposed by all-in-one post-removing process. Problems regarding the air-gap process were studied and solutions for moisture uptake and for metal wiring oxidation were developed. The proposed air-gap process is compatible with the conventional BEOL process. Furthermore, this process can build the air-gap structure with least additional process steps, and it tolerates misalignment.
Keywords :
Air gaps; Capacitance; Costs; Dielectric constant; Dry etching; Manufacturing processes; Moisture control; Oxidation; Semiconductor device manufacture; Wiring;
Conference_Titel :
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
978-1-4244-1911-1
Electronic_ISBN :
978-1-4244-1912-8
DOI :
10.1109/IITC.2008.4546964
