Title :
A high efficiency single chain GaAs MESFET MMIC dual band power amplifier for GSM/DCS handsets
Author :
Adar, A. ; DeMoura, J. ; Balshem, H. ; Lott, J.
Author_Institution :
Anadigics Inc., Warren, NJ, USA
Abstract :
In this paper, we describe the development of a single chain dual band power amplifier for GSM900/1800 applications. RFIC features include: single input-single output topology, three stages of amplification, switched input and inter-stage matching, positive power control, and negative voltage generation. The chip is fabricated using a high volume ion-implanted 0.5 /spl mu/m GaAs MESFET process and is assembled in a low cost, thermally enhanced SSOP16 plastic package. Typical performance, at +4.8 volts in GSM and DCS bands, is 48% PAE at Pout=+35 dBm and 44% PAE at Pout =+32.5 dBm respectively.
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; cellular radio; field effect MMIC; gallium arsenide; power control; radio equipment; 0.5 micron; 4.8 V; 44 percent; 48 percent; GSM/DCS handsets; GSM900/1800 applications; GaAs; GaAs MESFET MMIC power amplifier; RFIC features; SOP16 plastic package; dual band power amplifier; high efficiency operation; inter-stage matching; ion-implanted GaAs MESFET process; negative voltage generation; positive power control; single chain configuration; single input-single output topology; switched input; thermally enhanced package; Dual band; Gallium arsenide; Impedance matching; MESFETs; MMICs; Power amplifiers; Power control; Power generation; Radiofrequency integrated circuits; Topology;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-5049-9
DOI :
10.1109/GAAS.1998.722629
