DocumentCode
1905395
Title
Self Aligned CuGeN Process for 32/22nm Nodes and Beyond
Author
Liu, C.S. ; Chen, H.C. ; Bao, T.I. ; VanOlmen, J. ; Croes, K. ; VanBesien, E. ; Pantouvaki, M. ; Zhao, C. ; Sleeckx, E. ; Beyer, G. ; Yu, C.H.
Author_Institution
TSMC assignee at IMEC, Phone: 32-16-287720, Fax: 32-16-281576; E-mail: csliua@tsmc.com ; Anderson.Liu@imec.be
fYear
2008
fDate
1-4 June 2008
Firstpage
199
Lastpage
201
Abstract
Self aligned CuGeN barriers are used to improve the adhesion of Cu/SiC(N) interfaces at N45 technology. Eight times of electro-migration (EM) lifetime improvement has been demonstrated using thin CuGeN as a capping layer. Less than 5% metal lines Rs increase with a thin CuGeN capping layers were achieved at TSMC N45 node. CuGeN have more uniform films are the key to achieve low Rs increase successfully, which are important to N32/N22 and beyond technology.
Keywords
Adhesives; Amorphous materials; Annealing; Bridges; Dielectrics; Inorganic materials; Plasmas; Process control; Production; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location
Burlingame, CA, USA
Print_ISBN
978-1-4244-1911-1
Electronic_ISBN
978-1-4244-1912-8
Type
conf
DOI
10.1109/IITC.2008.4546966
Filename
4546966
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