Title :
Self Aligned CuGeN Process for 32/22nm Nodes and Beyond
Author :
Liu, C.S. ; Chen, H.C. ; Bao, T.I. ; VanOlmen, J. ; Croes, K. ; VanBesien, E. ; Pantouvaki, M. ; Zhao, C. ; Sleeckx, E. ; Beyer, G. ; Yu, C.H.
Author_Institution :
TSMC assignee at IMEC, Phone: 32-16-287720, Fax: 32-16-281576; E-mail: csliua@tsmc.com ; Anderson.Liu@imec.be
Abstract :
Self aligned CuGeN barriers are used to improve the adhesion of Cu/SiC(N) interfaces at N45 technology. Eight times of electro-migration (EM) lifetime improvement has been demonstrated using thin CuGeN as a capping layer. Less than 5% metal lines Rs increase with a thin CuGeN capping layers were achieved at TSMC N45 node. CuGeN have more uniform films are the key to achieve low Rs increase successfully, which are important to N32/N22 and beyond technology.
Keywords :
Adhesives; Amorphous materials; Annealing; Bridges; Dielectrics; Inorganic materials; Plasmas; Process control; Production; Testing;
Conference_Titel :
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
978-1-4244-1911-1
Electronic_ISBN :
978-1-4244-1912-8
DOI :
10.1109/IITC.2008.4546966
