Title :
Hot carriers effects in polycrystalline silicon thin-film transistors
Author :
Mariucci, L. ; Pecora, A. ; Fortunato, G. ; Reita, C. ; Migliorato, P.
Author_Institution :
IESS-CNR, Via Cineto Romano 42, 00156 ROMA, ITALY
Abstract :
The application of bias-stress with high source-drain voltage and negative gate voltage (transistor in off-status) produces a marked reduction in the off-current as well as a transconductance degradation. These effects have been explained in terms of hotholes injection into the gate insulator and formation of interface states near the drain.
Keywords :
Circuits; Degradation; Hot carrier effects; Hot carriers; Interface states; Silicon; Stress; Thin film transistors; Transconductance; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
