DocumentCode :
1905442
Title :
Comparative stud of low temperature poly-Si TFTs obtained by various crystallization techniques for use in active matrix LCDs
Author :
Pattyn, H. ; Poortmans, J. ; Debenest, P. ; Caymax, M. ; Vetter, P. ; Elliq, M. ; Fogarassy, E. ; Nényei, Z. ; Nijs, J. ; Mertens, R.
Author_Institution :
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
fYear :
1992
fDate :
14-17 Sept. 1992
Firstpage :
97
Lastpage :
100
Abstract :
Based on the electrical characteristics of low temperature poly-Si TFTs, various crystallization methods for the formation of the poly-Si bulk layer are evaluated.
Keywords :
Active matrix liquid crystal displays; Crystallization; Electron traps; Fabrication; Glass; Grain size; MOSFETs; Rapid thermal processing; Temperature; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
Print_ISBN :
0444894780
Type :
conf
Filename :
5435206
Link To Document :
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