Title :
Highly-Reliable Low-Resistance Cu Interconnects with PVD-Ru/Ti Barrier Metal toward Automotive LSIs
Author :
Tagami, M. ; Furutake, N. ; Saito, S. ; Hayashi, Y.
Author_Institution :
Device Platforms Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198 Japan, (Phone) +81-42-771-4267, (FAX) +81-42-771-0886, (E-mail) m-tagami@bk.jp.nec.com
Abstract :
Highly-reliable Cu interconnects with Ru/Ti barrier metal have been developed, in which Ti is diffused into the Ru-layer to establish a Cu-diffusion barrier. The PVD-Ru/Ti barrier metal with preferable crystal-orientation to Cu texture achieves the low line resistance. The Ti-doping in the Cu grain boundary just under the via improves the Cu-via reliabilities, besides keeping the Cu line resistance low. The Cu line with the Ru/Ti barrier metal is a strong candidate for automotive LSIs in future, requiring high performance and ultra-high reliability.
Keywords :
Annealing; Automotive engineering; Conductivity; Degradation; Diffraction; Electric resistance; Electrons; Grain boundaries; Grain size; X-ray scattering;
Conference_Titel :
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
978-1-4244-1911-1
Electronic_ISBN :
978-1-4244-1912-8
DOI :
10.1109/IITC.2008.4546968
