Title :
Laser Crystallised Poly-Si TFTs
Author :
Brotherton, S.D. ; McCulloch, D J ; Gowers, J.P. ; Gill, A
Author_Institution :
Philips Research Laboratories, Cross Oak Lane, Redhill, Surrey, RHI 5HA
Abstract :
Layers of ¿Si:H have been crystallised into poly-Si using a pulsed KrF excimer laser. Examination of the these layers by cross-sectional TEM has revealed a vertically stratified microstructure, with a large grain surface region crystallising from the molten phase. TFT behaviour correlated with both the thickness of this large grain region and the duration of the molten phase. With appropriate irradiation conditions, high quality TFTs have been fabricated on glass substrates with on:off current ratios of 108 and electron field effect mobilities up to 160cm2/Vs.
Keywords :
Crystal microstructure; Crystallization; Energy measurement; Gas lasers; Laser theory; Liquid crystals; Optical pulses; Pulsed laser deposition; Temperature; Thin film transistors;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
