Title :
Low-Temperature Plasma-Oxidation Process for Reliable Tantalum-Oxide (TaO) Decoupling Capacitors
Author :
Kume, I. ; Inoue, N. ; Toda, T. ; Furumiya, M. ; Takeuchi, T. ; Ito, F. ; Iwaki, T. ; Shida, S. ; Hayashi, Y.
Author_Institution :
Device Platforms Research Laboratories, NEC, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan, Phone: +81-42-771-4267 Fax: +81-42-771-0886 e-mail: kume@mel.cl.nec.co.jp
Abstract :
Low-temperature plasma-oxidation process of ultra-thin PVD-Ta is developed to fabricate MIM capacitors with high-k TaO dielectric through the current Cu-BEOL process. We found that controlling both the oxidation process and micro-structure of the initial Ta to be oxidized is a key to achieve high-quality TaO dielectrics. Laminated TiN/Ta/TiN bottom electrode with a flat surface in nano-scale contributes to high reliability. The integrated TaO-MIM capacitor in the Cu-BEOL achieves high breakdown voltage of 10 V with high capacitance of 13 fF/¿m2, and the TDDB lifetime at 85 °C exceeds 10 years at less than 4 V (2 MV/cm).
Keywords :
Capacitance; Electrodes; High K dielectric materials; Leakage current; MIM capacitors; Oxidation; Plasmas; Rough surfaces; Surface roughness; Tin;
Conference_Titel :
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
978-1-4244-1911-1
Electronic_ISBN :
978-1-4244-1912-8
DOI :
10.1109/IITC.2008.4546974
