Title :
Germanium on Silicon Modulators and Nanometallic-Enhanced Detectors for Optical Interconnects
Author :
Miller, David A B
Author_Institution :
Ginzton Laboratory, Stanford University, 450 Via Palou, Stanford CA 94305-4088, 650 723 0111 dabm@ee.stanford.edu
Abstract :
For optical interconnect to or on the chip, very efficient optoelectronic devices are required. We discuss the physics and device structures of optical modulators using germanium quantum wells grown on silicon substrates. We also show results and prospects for nanometallics structures to concentrate light into deeply sub-micron optoelectronic devices, and discuss limits to miniaturizing optical components.
Keywords :
Germanium; Nanoscale devices; Nanostructures; Optical detectors; Optical devices; Optical interconnections; Optical modulation; Optoelectronic devices; Physics; Silicon;
Conference_Titel :
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
978-1-4244-1911-1
Electronic_ISBN :
978-1-4244-1912-8
DOI :
10.1109/IITC.2008.4546975
