Title :
Numerical Analysis of InP-JFET by Use of a Quasi 2D-Model
Author :
Brockerhoff, W. ; Ellrodt, P. ; Guldner, W. ; Heime, K. ; Tegude, F.J.
Author_Institution :
Duisburg University, Department of Solid State Electronics, Sonderforschungsbereich 254, Kommandantenstr. 60, D-4100 Duisburg 1
Abstract :
The electrical performance of InP JFET in dependence on transport properties and technological parameters were investigated in detail by use of a quasi two-dimensional model including nonstationary transport effects. The analysis is carried out for gate lengths between 4¿m and 0.4¿m. The results were compared with experimental data and with those of GaAs and InGaAs FET.
Keywords :
Doping; Effective mass; Electron mobility; FETs; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Numerical analysis; Semiconductor process modeling; Solid state circuits;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
