Title :
A monolithic 24.9 GHz limiting amplifier using 0.2 /spl mu/m-AlGaAs/GaAs-HEMTs
Author :
Lao, Z. ; Berroth, M. ; Hurm, V. ; Rieger-Motzer, M. ; Thiede, A. ; Bronner, W. ; Hulsmann, A. ; Raynor, B.
Author_Institution :
Fraunhofer-Inst. fur Appl. Solid-State Phys., Freiburg, Germany
Abstract :
A monolithic limiting amplifier for high-speed communication systems has been fabricated using a 0.2 /spl mu/m enhancement/depletion AlGaAs/GaAs-HEMT (f/sub T/=60/55 GHz) technology. As a limiting amplifier, the circuit has a bandwidth of 24.9 GHz with a gain of 16 dB for an input power of -25 dBm. For applications as a linear amplifier, it has a bandwidth of 19.2 GHz with a gain of 26 dB for an input power of -50 dBm. Performance at a data bit rate of 25 Gb/s for single-ended input was obtained. The circuit features a differential configuration with ac-coupled active source followers to increase frequency band. The power consumption is 600 mW using a single supply voltage of -3.5 V.
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; differential amplifiers; gallium arsenide; limiters; wideband amplifiers; -3.5 V; 0.2 micron; 16 dB; 24.9 GHz; 25 Gbit/s; 600 mW; AC-coupled active source follower; AlGaAs-GaAs; differential circuit; enhancement/depletion AlGaAs/GaAs-HEMT; high-speed communication system; linear amplifier; monolithic limiting amplifier; Bandwidth; Broadband amplifiers; Circuits; FETs; Gain; Optical amplifiers; Optical buffering; Power amplifiers; Semiconductor optical amplifiers; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-3504-X
DOI :
10.1109/GAAS.1996.567871
