Title :
5 Gbps 0.35-μm CMOS driver for laser diode or optical modulator
Author :
Li, Lianming ; Huang, Ting ; Feng, Jun ; Wang, Zhigong ; Xiong, Mingzhen
Author_Institution :
Inst. of RF- & OE-ICs, Southeast Univ., Nanjing, China
Abstract :
This paper presents a versatile driver for laser diode or optical modulator using a 0.35-μm CMOS process. In this driver, a quasi push-pull source follower is introduced. Combined with a dynamic amplification technique, the driver´s slew rate and output voltage swing are increased; meanwhile the overshoot is efficiently reduced. The driver works well at 2.5 Gbps under 3.3 V and 5 V supply voltage, consuming typical power of 310 mW and 945 mW respectively. It can give a modulation voltage (with 50-Ω load) ranging from 0.55 VP-P to 4.2 VP-P under 3.3 V supply voltage and 0.6 Vp-p to 6.2 VP-P under 5 V supply voltage, therefore it can be used as a laser diode or optical modulator driver. When the driver was tested with a LiNbO3 modulator, clear optical eye diagrams were measured at 2.5 Gbps and 5 Gbps, respectively. The die area is 0.57 mm2.
Keywords :
CMOS integrated circuits; buffer circuits; driver circuits; electro-optical modulation; optical transmitters; preamplifiers; semiconductor lasers; 0.35 micron; 0.55 to 4.2 V; 0.6 to 6.2 V; 2.5 Gbit/s; 3.3 V; 310 mW; 5 Gbit/s; 5 V; 50 ohm; 945 mW; CMOS driver; LiNbO3; buffer-amplifier; driver slew rate; dynamic amplification technique; laser diode driver; modulation voltage; optical eye diagrams; optical modulator driver; output voltage swing; overshoot reduction; preamplifier; quasi push-pull source follower; CMOS technology; Diode lasers; Driver circuits; High speed optical techniques; Optical buffering; Optical fibers; Optical modulation; Stimulated emission; Transistors; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2004. ESSCIRC 2004. Proceeding of the 30th European
Print_ISBN :
0-7803-8480-6
DOI :
10.1109/ESSCIR.2004.1356672