Title :
Investigations of the resistivity of TiSi/p+ contacts and their optimisation in a 0.5 μm CMOS technology
Author :
Neumueller, W. ; Hoehnel, F.
Author_Institution :
SIEMENS AG, Dept.ZFE BT ACM 11, Otto-Hahn-Ring 6, 8000 Munich 83, Germany
Abstract :
The contact resistance between TiSi and p+ junctions in a CMOS process is electrically measured and optimized by process variations. Effects on PMOS drain current are shown and the suitability of TiSi for this CMOS process is demonstrated.
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
