• DocumentCode
    1905892
  • Title

    Investigations of the resistivity of TiSi/p+ contacts and their optimisation in a 0.5 μm CMOS technology

  • Author

    Neumueller, W. ; Hoehnel, F.

  • Author_Institution
    SIEMENS AG, Dept.ZFE BT ACM 11, Otto-Hahn-Ring 6, 8000 Munich 83, Germany
  • fYear
    1992
  • fDate
    14-17 Sept. 1992
  • Firstpage
    17
  • Lastpage
    20
  • Abstract
    The contact resistance between TiSi and p+ junctions in a CMOS process is electrically measured and optimized by process variations. Effects on PMOS drain current are shown and the suitability of TiSi for this CMOS process is demonstrated.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    0444894780
  • Type

    conf

  • Filename
    5435223
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1905892