Title :
A 5 GHz fully integrated ESD-protected low-noise amplifier in 90 nm RF CMOS
Author :
Linten, D. ; Thijs, S. ; Natarajan, M.I. ; Wambacq, P. ; Jeamsaksiri, W. ; Ramos, J. ; Mercha, A. ; Jenei, S. ; Donnay, S. ; Decoutere, S.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
A 5.5 GHz fully integrated low-power ESD-protected low-noise amplifier (LNA), designed and verified in a 90 nm RF CMOS technology, is presented for the first time. This 9.7 mW LNA features a 13.3 dB power gain with a noise figure of 2.9 dB, while maintaining an input return loss of -14 dB.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; electrostatic discharge; low-power electronics; 13.3 dB; 14 dB; 2.9 dB; 5.5 GHz; 9.7 mW; 90 nm; ESD-protected low-noise amplifier; RF CMOS technology; fully integrated LNA; low-power LNA; CMOS technology; Circuits; Electrostatic discharge; Gain; Low-noise amplifiers; MOSFETs; Protection; Radio frequency; Stress; Voltage-controlled oscillators;
Conference_Titel :
Solid-State Circuits Conference, 2004. ESSCIRC 2004. Proceeding of the 30th European
Print_ISBN :
0-7803-8480-6
DOI :
10.1109/ESSCIR.2004.1356675
