In-band diode pumped high power Ho:YLF laser

Author

Scholle, K. ; Lamrini, S. ; Gatzemeier, F. ; Koopmann, P. ; Fuhrberg, P.

Author_Institution

LISA laser products OHG, Katlenburg, Germany

fYear

2013

fDate

12-16 May 2013

Firstpage

1

Lastpage

1

Abstract

In this paper we present for the first time results on in-band pumping of a Ho:YLF laser using a GaSb laser diode stack with centre emission wavelength at 1930 nm as pump source. Ho:YLF is a very attractive laser material, because the lifetime of the upper laser level is much longer ( ~ 14 ms) than in Ho:YAG and the emission cross sections are higher. Additionally the thermal lens in Ho:YLF is much weaker, which helps to generate diffraction limited beams even under intense end-pumping.

Keywords

III-V semiconductors; gallium compounds; holmium; laser beams; lithium compounds; optical pumping; solid lasers; thermal lensing; yttrium compounds; GaSb; GaSb laser diode stack; YLF:Ho; diffraction limited beams; emission cross sections; emission wavelength; in-band diode pumped high power Ho:YLF laser; intense end-pumping; laser material; pump source; thermal lens; upper laser level lifetime; wavelength 1930 nm; Crystals; Diode lasers; Gas lasers; Laser excitation; Pump lasers; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe (CLEO EUROPE/IQEC), 2013 Conference on and International Quantum Electronics Conference

Conference_Location

Munich

Print_ISBN

978-1-4799-0593-5

Type

conf

DOI

10.1109/CLEOE-IQEC.2013.6800613

Filename

6800613