A 100 W S-band AlGaAs/GaAs hetero-structure FET for base stations of wireless personal communications

A 100 W low distortion AlGaAs-GaAs hetero-structure FET, which is the smallest package size ever reported, has been developed for TDMA and CDMA cellular base stations. The FET exhibited 100 W (50 dBm) saturation output power, and 11.5 dB power gain at 1 dB gain compression at 2.1 GHz. The third order inter-modulation distortion (IMD3) and the power added efficiency (PAE) under two-tone test condition (/spl Delta/f=1 MHz) were -35 dBc and 24%, respectively at 42 dBm output power, of which the level was 8 dB back-off from saturation power. To reduce the cost and the space, the size of the chip and the package were miniaturized to 1.41/spl times/2.6 mm/sup 2/ and 17.4/spl times/24.0 mm/sup 2/, respectively by lengthening the gate finger.