• DocumentCode
    1906415
  • Title

    Analysis of the transistor chain operation in CMOS gates for short channel devices

  • Author

    Chatzigeorgiou, A. ; Nikolaidis, S.

  • Author_Institution
    Dept. of Comput. Sci., Aristotelian Univ. of Thessaloniki, Greece
  • Volume
    6
  • fYear
    1998
  • fDate
    31 May-3 Jun 1998
  • Firstpage
    363
  • Abstract
    A detailed analysis of the transistor chain operation in CMOS gates is presented. The chain is diminished to a transistor pair taking into account the actual operating conditions of the structure. The output waveform is obtained analytically, without linear approximations of the output voltage and for ramp inputs. The α-power transistor current model which takes into account second order effects of submicron devices is used, while previous inconsistencies in the chain currents are eliminated by introducing a drain-to-source voltage modulation factor. The exact time when the chain starts conducting is efficiently calculated removing a major source of errors. The calculated output waveform results according to the proposed model are in excellent agreement with SPICE simulations
  • Keywords
    CMOS logic circuits; MOSFET; logic CAD; logic gates; semiconductor device models; α-power transistor current model; CMOS gates; drain-to-source voltage modulation factor; linear approximations; operating conditions; output voltage; output waveform; second order effects; short channel devices; submicron devices; transistor chain operation; transistor pair; Circuit simulation; Computer science; Integrated circuit modeling; Linear approximation; Parasitic capacitance; Physics; SPICE; Semiconductor device modeling; Timing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1998. ISCAS '98. Proceedings of the 1998 IEEE International Symposium on
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    0-7803-4455-3
  • Type

    conf

  • DOI
    10.1109/ISCAS.1998.705286
  • Filename
    705286