Title :
L/S-band 140 W push-pull power AlGaAs/GaAs HFETs for digital cellular base stations
Author :
Takenaka, I. ; Takahashi, H. ; Asano, K. ; Ishikura, K. ; Morikawa, J. ; Sato, K. ; Takano, I. ; Hasegawa, K. ; Tokunaga, K. ; Emori, F. ; Kuzuhara, M.
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Otsu, Japan
Abstract :
An L/S-band high-power and low-distortion AlGaAs/GaAs HFET amplifier has been developed. The amplifier employed two pairs of pre-matched GaAs chips mounted on a single package and the total output-power was combined in push-pull configuration with a microstrip balun circuit. The developed amplifier demonstrated state-of-the-art performance of 140 W output-power with 11.5 dB linear gain at 2.2 GHz. In addition, it exhibited extremely low distortion performance, which is suitable for digital cellular base station system applications.
Keywords :
III-V semiconductors; UHF field effect transistors; UHF power amplifiers; aluminium compounds; cellular radio; digital radio; gallium arsenide; impedance matching; microstrip circuits; power field effect transistors; radio equipment; 11.5 dB; 140 W; 2.2 GHz; AlGaAs-GaAs; AlGaAs/GaAs HFETs; L-band; S-band; digital cellular base stations; high-power HFET amplifier; low-distortion HFET amplifier; microstrip balun circuit; pre-matched GaAs chips; push-pull configuration; Base stations; Circuits; Gallium arsenide; HEMTs; High power amplifiers; Impedance matching; MODFETs; Microstrip; Packaging; Performance gain;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-5049-9
DOI :
10.1109/GAAS.1998.722633
