Title :
Study of Vertical Transport through Schottky-Gated, Laterally Confined Quantum-Dot Devices
Author :
Blanc, N. ; Guéret, P. ; Germann, R. ; Rothuizen, Hugo
Author_Institution :
IBM Research Division, Zurich Research Laboratory, 8803 Rÿschlikon, Switzerland
Abstract :
We present the conductance properties of resonant tunneling heterostructures, laterally confined by a Schottky gate so that the confinement can be varied in a continuous and controlled way. Data on dots with nominal diameters in the submicron range are reported.
Keywords :
Control systems; Etching; Gallium arsenide; Ohmic contacts; Potential well; Quantum dots; Resonant tunneling devices; Schottky barriers; Temperature control; Voltage control;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
