Title :
A high efficiency 0.15 /spl mu/m 2-mil thick InGaAs/AlGaAs/GaAs V-band power HEMT MMIC
Author :
Lai, R. ; Nishimoto, M. ; Hwang, Y. ; Biedenbender, M. ; Kasody, B. ; Geiger, C. ; Chen, Y.C. ; Zell, G.
Author_Institution :
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
We present a unique high performance 0.15 /spl mu/m InGaAs/AlGaAs/GaAs HEMT MMIC power amplifier fabricated with a 2-mil thick GaAs substrate which operates at V-band. The 2-stage 59-64 GHz power MMIC amplifier exhibits 27% peak power added efficiency at 60 GHz with 275 mW output power (350 mW/mm) and 11 dB power gain. When biased for higher output power, 400 mW output power was achieved at 60 GHz with 24.5% power added efficiency. This is the highest reported combination of output power and power added efficiency reported to date at this frequency band. This amplifier also exhibits outstanding wideband power characteristics with 25.5/spl plusmn/0.5 dBm output power measured from 59-64 GHz.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; field effect MMIC; gallium arsenide; indium compounds; millimetre wave amplifiers; millimetre wave power amplifiers; power amplifiers; 0.15 micron; 11 dB; 2 mil; 24.5 to 27 percent; 275 to 400 mW; 59 to 64 GHz; InGaAs-AlGaAs-GaAs; InGaAs/AlGaAs/GaAs HEMT MMIC power amplifier; V-band; output power; power added efficiency; Broadband amplifiers; Frequency; Gain; Gallium arsenide; HEMTs; High power amplifiers; Indium gallium arsenide; MMICs; Power amplifiers; Power generation;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-3504-X
DOI :
10.1109/GAAS.1996.567874
