Title :
Pseudomorphic Two-Dimensional Electron-Gas-Emitter Resonant Tunneling Devices
Author :
Brugger, H. ; Meiners, U. ; Wölk, C. ; Deufel, R. ; Marten, A. ; Rossmanith, M. ; Klitzing, K.v. ; Sauer, R.
Author_Institution :
Daimler Benz AG, Forschungszentrum, P.O. Box 2360, D-7900 Ulm, Germany
Abstract :
A resonant tunneling diode with the highest room temperature peak-to-valley current ratio (PVR) in the GaAs/AlGaAs system is described. Using a pseudomorphic InGaAs quantum well for carrier injection, room temperature PVR = 7.2 and liquid nitrogen temperature PVR = 27 were obtained with a reasonable peak current density of 104A/cm2. Experiments under hydrostatic pressure give evidence that X-like states in the barriers are strongly involved in the tunneling process.
Keywords :
Current density; Diodes; Doping profiles; Frequency; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Resonant tunneling devices; Substrates; Temperature;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
