Modeling and performance of spiral inductors in SOI CMOS technology

Author

Zencir, Ertan ; Dogan, Numan S. ; Arvas, Ercument

Author_Institution

Dept. of Electr. Eng., North Carolina A&T State Univ., Greensboro, NC, USA

Volume

1

fYear

2002

fDate

2002

Firstpage

408

Abstract

Modeling and performance of on-chip spiral inductors is presented. Y-parameters are obtained from the measured S-parameters of the inductor fabricated in 0.35 μm SOI CMOS technology. Matlab is used to obtain the π-equivalent circuit model parameters at each frequency point. The SOI CMOS inductor shows better performance characteristics in terms of Q-factor and self-resonance frequency.

Keywords

CMOS integrated circuits; Q-factor; S-parameters; circuit simulation; equivalent circuits; field effect MMIC; inductors; resonance; semiconductor device models; silicon-on-insulator; 0.35 micron; Matlab pi-equivalent circuit model parameters; Q-factor; RFIC; S-parameters; SOI CMOS inductor; SOI CMOS technology; Y-parameters; frequency point; modeling; on-chip spiral inductors; performance characteristics; self-resonance frequency; CMOS technology; Capacitance; Inductance; Inductors; Mathematical model; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling; Silicon on insulator technology; Spirals;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 2002. IEEE CCECE 2002. Canadian Conference on

ISSN

0840-7789

Print_ISBN

0-7803-7514-9

Type

conf

DOI

10.1109/CCECE.2002.1015259

Filename

1015259