Title :
Modeling and performance of spiral inductors in SOI CMOS technology
Author :
Zencir, Ertan ; Dogan, Numan S. ; Arvas, Ercument
Author_Institution :
Dept. of Electr. Eng., North Carolina A&T State Univ., Greensboro, NC, USA
Abstract :
Modeling and performance of on-chip spiral inductors is presented. Y-parameters are obtained from the measured S-parameters of the inductor fabricated in 0.35 μm SOI CMOS technology. Matlab is used to obtain the π-equivalent circuit model parameters at each frequency point. The SOI CMOS inductor shows better performance characteristics in terms of Q-factor and self-resonance frequency.
Keywords :
CMOS integrated circuits; Q-factor; S-parameters; circuit simulation; equivalent circuits; field effect MMIC; inductors; resonance; semiconductor device models; silicon-on-insulator; 0.35 micron; Matlab pi-equivalent circuit model parameters; Q-factor; RFIC; S-parameters; SOI CMOS inductor; SOI CMOS technology; Y-parameters; frequency point; modeling; on-chip spiral inductors; performance characteristics; self-resonance frequency; CMOS technology; Capacitance; Inductance; Inductors; Mathematical model; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling; Silicon on insulator technology; Spirals;
Conference_Titel :
Electrical and Computer Engineering, 2002. IEEE CCECE 2002. Canadian Conference on
Print_ISBN :
0-7803-7514-9
DOI :
10.1109/CCECE.2002.1015259
