Photo-response of a p-type Si field emitter

Author

Mimura, H. ; Ukeba, T. ; Shimawaki, H. ; Yokoo, K.

Author_Institution

Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan

fYear

2003

fDate

7-11 July 2003

Firstpage

9

Lastpage

10

Abstract

The high-frequency bunched-beam (pulsed beam train) generated directly from a cathode is strongly desired for a compact microwave vacuum tube with high efficiency. The emission current from a p-type semiconductor field emitter saturates in dark with increase of the gate voltage because of the supply limit of the minority carrier. When a p-type emitter is illuminated by light with photon energy larger than the band gap energy, the emission current is remarkably increased because of the additional supply of the photo-excited carriers. It suggests that the bunched beam could be obtained, when the p-type emitter is irradiated with a pulsed laser beam. The frequency of the bunched beam, however, is limited by the photo-response of the emitter. Therefore, we investigated the photo-response of a p-type Si field emitter under the irradiation of a pulsed laser beam.

Keywords

electron field emission; elemental semiconductors; silicon; 5 mus; Si; emission current; emitter photo-response; gate voltage; high-frequency bunched-beam; p-type Si field emitter; pulsed laser beam; real rise time; semiconductor field emitter; Laser beams; Optical amplifiers; Optical pulse generation; Optical pulses; Photodiodes; Photonic band gap; Power lasers; Pulse amplifiers; Stimulated emission; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International

Conference_Location

Osaka, Japan

Print_ISBN

4-8181-9515-4

Type

conf

DOI

10.1109/IVMC.2003.1222951

Filename

1222951