Title :
Single-chip 30 W CW AlGaAs/GaAs heterojunction bipolar transistor at 3 GHz
Author :
Hill, D. ; Hua-Quen Tserng ; Tae Kim ; Tutt, M.
Author_Institution :
Corp. Res. & Dev., Texas Instrum. Inc., Dallas, TX, USA
Abstract :
We have fabricated heterojunction bipolar transistors that, to our knowledge, exhibit record operating voltage and single-chip output power for GaAs microwave power devices. A device with 720 /spl mu/m total emitter length achieved an output power of 4 W with 62% power-added efficiency at 3 GHz at a collector bias of 20 V. A device monolithically combining 16 unit cells, for a total emitter length of 7.68 mm, achieved a CW output power of 30 W with 55% power-added efficiency at 3 GHz.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; 20 V; 3 GHz; 30 W; 55 percent; AlGaAs-GaAs; CW output power; microwave power device; power-added efficiency; single-chip AlGaAs/GaAs heterojunction bipolar transistor; Fabrication; Fingers; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Instruments; Low voltage; Microwave devices; Power amplifiers; Power generation;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-3504-X
DOI :
10.1109/GAAS.1996.567875
