Title :
Low voltage power amplifier based on nonoscale CMOS
Author :
Suebsombut, Paweena ; Rangsee, Pattarakamon ; Chaisricharoen, Roungsan
Author_Institution :
Sch. of Inf. Technol., Mae Fah Luang Univ., Chiang Rai, Thailand
Abstract :
The low voltage power amplifier based on nanoscale CMOS has been designed and simulated in this paper. The power amplifier has designed by 2 stages cascade amplifier on 90 nm RF CMOS transistor. The first stage is the differential amplifier to amplify the signal between two inputs of the first amplifier and the second stage is the common drain amplifier to generate low power to power amplifier. This amplifier is designed for a smaller dimension due to CMOS technology. This power amplifier uses low voltage (1.5 V) to conserve the power consumption of amplifier. The output gain of this power amplifier is 23 dB at 2.45 GHz. The output power of this power amplifier is 34.3 dB at 2.45 GHz.
Keywords :
CMOS integrated circuits; UHF power amplifiers; cascade networks; differential amplifiers; RF CMOS transistor; cascade amplifier; differential amplifier; drain amplifier; frequency 2.45 GHz; gain 23 dB; low voltage power amplifier; nanoscale CMOS; size 90 nm; voltage 1.5 V; CMOS integrated circuits; CMOS technology; Educational institutions; Low voltage; Nanoscale devices; Power amplifiers; Transistors; CMOS technology; cascade amplifier; nanoscale technology;
Conference_Titel :
Communications and Information Technologies (ISCIT), 2013 13th International Symposium on
Conference_Location :
Surat Thani
Print_ISBN :
978-1-4673-5578-0
DOI :
10.1109/ISCIT.2013.6645940
