DocumentCode
1906997
Title
Effect of oxide thickness on the low-frequency noise in MOSFET-based charge transfer devices
Author
Singh, Vipul ; Inokawa, Hiroshi ; Satoh, Hiroaki
Author_Institution
Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan
fYear
2010
fDate
13-14 June 2010
Firstpage
1
Lastpage
2
Abstract
In this paper, current noise in the charge-transfer device fabricated by 65-nm bulk CMOS process, having different gate oxide thicknesses is reported both under direct current (DC) and charge transfer (CT) mode of operations. The interface trap density in these gate oxides were also estimated using charge pumping technique. Optimized gate oxide thickness for reduced noise power in the CT operation mode was obtained.
Keywords
CMOS integrated circuits; MOSFET; charge exchange; semiconductor device noise; CMOS process; MOSFET; charge pumping; charge transfer devices; direct current mode; gate oxide thickness; interface trap density; low-frequency noise; size 65 nm; Charge coupled devices; Charge pumps; Delay; Fluctuations; Logic gates; MOSFETs; Noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Nanoelectronics Workshop (SNW), 2010
Conference_Location
Honolulu, HI
Print_ISBN
978-1-4244-7727-2
Electronic_ISBN
978-1-4244-7726-5
Type
conf
DOI
10.1109/SNW.2010.5562539
Filename
5562539
Link To Document