DocumentCode :
1907024
Title :
High Energy Photon Emission in GaAs MESFETs and AIGaAs/GaAs HEMTs
Author :
Zanoni, E. ; Tedesco, C. ; Paccagnella, A. ; Canali, C. ; Bigliardi, S. ; Manfredi, M.
Author_Institution :
Dipartimento di Elettronica e Informatica, Universita´´ di Padova, Via Gradengio 3a, 35131 Padova, Italy
fYear :
1991
fDate :
16-19 Sept. 1991
Firstpage :
581
Lastpage :
584
Abstract :
We present a detailed investigation of hot carrier induced impact ionization and light emission in submicron GaAs MESFETs and AlGaAs/GaAs HEMTs demonstrating that emission of photons with hv≫ Eg is mainly caused by recombination between channel electrons and holes generated by impact ionization.
Keywords :
Character generation; Charge carrier processes; Electron emission; Gallium arsenide; HEMTs; Impact ionization; MESFETs; MODFETs; Photonics; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
Print_ISBN :
0444890661
Type :
conf
Filename :
5435266
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1907024
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