Title :
Optimization of the AlInAs Growth Temperature for AlInAs/GaInAs HEMTs Grown by MBE
Author :
Künzel, H. ; Passenberg, W. ; Böttcher, J. ; Heedt, C.
Author_Institution :
Heinrich-Hertz-Institut fÿr Nachrichtentechnik Berlin GmbH, Einsteinufer 37, D-1000 Berlin 10, Germany
Abstract :
The material characteristics of MBE grown AlInAs layers relevant to AlInAs/InGaAs HEMTs, such as surface morphology and specific resistivity, and doping and Schottky contact behaviour, have been investigated in dependence of the growth temperature. Respective optimum results were obtained at different temperatures which were adopted for the growth of HEMT structures. Preliminary results on 1 ¿m gate length devices are presented.
Keywords :
Doping; Electrons; Gold; HEMTs; MODFETs; Rough surfaces; Schottky barriers; Surface morphology; Surface roughness; Temperature dependence;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
