DocumentCode
1907061
Title
A new type of inverter with Juctionless (J-Less) transistors
Author
Hsieh, E.R. ; Chung, Steve S.
Author_Institution
Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2010
fDate
13-14 June 2010
Firstpage
1
Lastpage
2
Abstract
A new type of inverter built on a specific channel without source/drain junction is proposed. This inverter can be formed by a connected n- and p-doped channel as the substrate and with complementary p- and n-doped gates respectively. The transistor operation is in accumulation mode, different from the conventional CMOS devices with inversion mode of operation. Extensive simulations have been made to demonstrate this transistor with high current density and good short channel control on 10nm technology and beyond. Good inverter characteristics are also shown. This new inverter device will be ready for the 20nm node and beyond.
Keywords
CMOS logic circuits; current density; invertors; transistors; CMOS device; J-less transistor; current density; inverter; junctionless transistor; n-doped channel; p-doped channel; CMOS integrated circuits; Capacitance; Electrodes; Inverters; Logic gates; Transient analysis; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Nanoelectronics Workshop (SNW), 2010
Conference_Location
Honolulu, HI
Print_ISBN
978-1-4244-7727-2
Electronic_ISBN
978-1-4244-7726-5
Type
conf
DOI
10.1109/SNW.2010.5562541
Filename
5562541
Link To Document