DocumentCode :
1907120
Title :
Performance characteristics of strongly correlated bilayer graphene for post-CMOS logic devices
Author :
Dellabetta, B. ; Gilbert, M.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
fYear :
2010
fDate :
13-14 June 2010
Firstpage :
1
Lastpage :
2
Abstract :
Post-CMOS logic in bilayer graphene is very promising due to the possibility of observing room temperature collective states. We present calculations of graphene bilayers and the conditions necessary for excitonic superfluidity. At room temperature, the maximum current the condensate can support is increased over low temperature values and we can achieve negative differential resistances greater than 3 orders of magnitude between the condensate current and the non-interacting quasiparticle current which flows after exceeding the maximum current.
Keywords :
CMOS logic circuits; graphene; logic devices; superfluidity; bilayer graphene; excitonic superfluidity; negative differential resistances; performance characteristics; post-CMOS logic devices; Book reviews; Critical current; Interference; Logic gates; Performance evaluation; Tunneling; graphene; logic; post-CMOS; simulation; transport;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2010
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-7727-2
Electronic_ISBN :
978-1-4244-7726-5
Type :
conf
DOI :
10.1109/SNW.2010.5562544
Filename :
5562544
Link To Document :
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