Title :
Characteristics of nano electron source fabricated using beam assisted process
Author :
Murakami, K. ; Takai, M.
Author_Institution :
Graduate Sch. of Eng. Sci., Osaka Univ., Toyonaka, Japan
Abstract :
In this study, nanoelectron sources have been fabricated using a beam-assisted maskless process alone. The process uses chemical reactions by electron beam (EB) or focused ion beam (FIB) in various gas atmospheres. The gate diameter, shape and emitter height of nano electron sources can be freely designed and fabricated. The I-V characteristics of fabricated nano-electron sources have been measured.
Keywords :
chemical reactions; electron field emission; nanoelectronics; beam assisted maskless process; chemical reactions; electron beam process; focused ion beam process; gas atmospheres; nano electron sources; Atmosphere; Bonding; Cathodes; Electron sources; Fabrication; Gold; Insulation; Materials science and technology; Shape; Voltage;
Conference_Titel :
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location :
Osaka, Japan
Print_ISBN :
4-8181-9515-4
DOI :
10.1109/IVMC.2003.1222967
