Title :
CMOS-compatible fabrication of room-temperature Ge QD single hole transistors
Author :
Chen, I.H. ; Chen, K.H. ; Chou, H.H. ; Li, P.W.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan
Abstract :
Precise control on quantum dot (QD) number and tunnel path in a self-organized manner is crucial for effective single electron tunneling. We experimentally demonstrated a single Ge QD (~10 nm) self-aligned with nickel-silicide electrodes via Si3N4/SiO2 tunnel barriers by thermally oxidizing a SiGe nanorod. The fabricated Ge QD single hole transistor (SHT) features with clear differential conductance and Coulomb-blockade oscillation behaviors at near room temperature.
Keywords :
CMOS integrated circuits; Coulomb blockade; Ge-Si alloys; germanium; quantum dots; single electron transistors; CMOS-compatible fabrication; Coulomb-blockade oscillation; Si3N4-SiO2; SiGe; differential conductance; nanorod; quantum dot number; quantum dot single hole transistors; single electron tunneling; temperature 293 K to 298 K; Electrodes; Fabrication; Logic gates; Oscillators; Scanning electron microscopy; Silicon germanium; Tunneling;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2010
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-7727-2
Electronic_ISBN :
978-1-4244-7726-5
DOI :
10.1109/SNW.2010.5562548
