DocumentCode
1907214
Title
Low Frequency Noise in 100 nm n-MOSFET´s at Low Temperatures
Author
Shi, Z.M. ; Miéville, J. -P ; Barrier, J. ; Dutoit, M.
Author_Institution
Institute for Micro-and Optoelectronics, Swiss Federal Institute of Technology, CH-1015 Lausanne, Switzerland
fYear
1991
fDate
16-19 Sept. 1991
Firstpage
543
Lastpage
546
Abstract
This work shows that charge trapping and detrapping in the gate oxide, which produce low-frequency noise in the drain current of MOSFET´s in the classical transport regime, disappear when quantum transport becomes important. In this latter regime, a new type of low frequency fluctuations is observed.
Keywords
Acoustical engineering; Electric variables measurement; Electron traps; Fluctuations; Frequency measurement; Low-frequency noise; MOSFET circuits; Particle scattering; Temperature; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location
Montreux, Switzerland
Print_ISBN
0444890661
Type
conf
Filename
5435273
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