DocumentCode
1907248
Title
MCT packaging
Author
Neugebauer, C.A. ; Burgess, J.F. ; Glascock, H.H. ; Temple, V.A.K. ; Watrous, D.L.
Author_Institution
GE Res. & Dev. Center, Schenectady, NY, USA
fYear
1990
fDate
20-23 May 1990
Firstpage
908
Abstract
An effort was made to develop a hermetic MCT (MOS controlled thyristor) packaging approach in which the package does not limit the switching efficiency of the power semiconductor chip itself. This was accomplished by the development of the hermetic thin-pack (HTP) packaging approach, which results in a hermetic package outline not much bigger than the chip itself. This is achieved by the replacement of the traditional aluminum wire bonds with small (0.040-in) copper spheres which make the connections to the chip topside contacts (gate and anode) through holes cut directly through the ceramic (alumina) lid. Electrical contact is made to the chip by means of thermocompression and hard solders and to the lid by means of hermetically bonded direct-bond copper foil. The HTP approach has so far been applied to MCT chips as large as 0.500 on edge. The package thickness can be as small as 0.050 in. The package resistance is 0.35 Ω/cm2 and the inductance is 1 pH/cm2
Keywords
metal-insulator-semiconductor devices; packaging; thyristors; Cu spheres; MOS controlled thyristor; direct bond Cu foil; hard solders; hermetic thin-pack; packaging; power semiconductor chip; thermocompression; Aluminum; Anodes; Ceramics; Contacts; Copper; MOSFETs; Power semiconductor switches; Semiconductor device packaging; Thyristors; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference, 1990. ., 40th
Conference_Location
Las Vegas, NV
Type
conf
DOI
10.1109/ECTC.1990.122297
Filename
122297
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