Title :
Quantum Transport Effects in Deep Submicron n-MOSFET
Author :
Miéville, J.P. ; Eschle, M. ; Shi, Z.M. ; Barrier, J. ; Dutoit, M. ; Moret, J.M. ; Oppliger, Y.
Author_Institution :
Institut de Micro-et Optoélectronique, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
Abstract :
MOSFET´s with gate lengths down to 0.1 ¿m were characterized at low temperatures. Below 20 K, characteristic peaks in the transconductance were observed in weak and moderate inversion at low drain voltages. This result can be explained by quantum transport mediated by localized states in the channel.
Keywords :
Electron beams; Electron optics; Low voltage; MOSFET circuits; Microelectronics; Oxidation; Resists; Temperature measurement; Threshold voltage; Transconductance;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
