Analytical expression for storage time and injection ratio of a non-uniformly doped n-Si SBD

In this work, a closed form equation for minority carrier density p(x) is obtained based on a proposed relation between electric field and hole profile p(x). Two important parameters of a Schottky Barrier Diode (SBD) namely storage time and injection ratio can be obtained from p(x). In previous analytical works, such study was done for SBDs with uniformly doped Si. The closed form solution for p(x) is applicable for all levels of injection. The effect of low-high (n^-n+) junction is also studied in this work. Present analysis shows that minority current, charge storage time and current injection ratio depend on the logarithmic slope and effective surface recombination velocity.