Extreme ultra-violate exposure induced damages on non-volatile memories

Author

Tsui, Bing-Yue ; Yen, Chih-Chan ; Li, Po-Hsueh ; Lu, Chih-Pei ; Lai, Jui-Yao

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2010

fDate

13-14 June 2010

Firstpage

1

Lastpage

2

Abstract

The impact of extreme ultra-violate (EUV) exposure induced damages on the characteristics of Si-Oxide-Nitride-Oxide-Si (SONOS) memory and nano-crystal (NC) memory are investigated. In SONOS memory, the erase speed slows down and the endurance degrades severely due to the EUV induced deep-level traps in the dielectric stack and can not recover after 600°C annealing. The NC memory exhibits much better EUV radiation tolerance than the SONOS memory. This work suggests that the EUV lithography could be a potential solution for advanced NC memories without reliability issue.

Keywords

annealing; dielectric devices; random-access storage; ultraviolet lithography; EUV induced deep-level trap; EUV lithography; EUV radiation tolerance; SONOS memory; annealing; dielectric stack; erase speed; extreme ultra-violate exposure induced damage; nano-crystal memory; nonvolatile memory; si-oxide-nitride-oxide-si memory; Aluminum oxide; Annealing; Electron traps; International Electron Devices Meeting; Lithography; SONOS devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Nanoelectronics Workshop (SNW), 2010

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-7727-2

Electronic_ISBN

978-1-4244-7726-5

Type

conf

DOI

10.1109/SNW.2010.5562552

Filename

5562552